External

Semiconductor Devices - Theory and Application

The goal of this text is to allow the reader to become proficient in the analysis and design of circuits utilizing discrete semiconductor devices. It progresses from basic diodes through bipolar and field effect transistors. The text is intended for use in a first or second year course on semiconductors at the Associate or Baccalaureate level.

Electrical Engineering Engineering

Author: James M. Fiore
Publisher: Mohawk Valley Community College
Source: LibreTexts
License: CC BY-NC-SA
Language: EN

Read online Download PDF (open licence)

Contents· 117 sections

01: Semiconductor Fundamentals
1.1: Introduction
1.2: Atomic Structure
1.3: Crystals
1.4: Doped Materials
1.5: Summary
02: PN Junctions and Diodes
2.1: Introduction
2.2: The PN Junction
2.3: Diode Data Sheet Interpretation
2.4: Diode Circuit Models
2.5: Other Types of Diodes
2.6: Summary
2.7: Exercises
2.8: An Alternate Hypothesis Regarding PN Junctions
03: Diode Applications
3.1: Introduction
3.2: Rectification
3.3: Clippers
3.4: Clampers
3.5: Summary
3.6: Exercises
04: Bipolar Junction Transistors (BJTs)
4.1: Introduction
4.2: The Bipolar Junction Transistor
4.3: BJT Collector Curves
4.4: BJT Data Sheet Interpretation
4.5: Ebers-Moll Model
4.6: DC Load Lines
4.7: BJT Switching and Driver Applications
4.8: Summary
4.9: Exercises
05: BJT Biasing
5.1: Introduction
5.2: The Need For Biasing
5.3: Two-Supply Emitter Bias
5.4: Voltage Divider Bias
5.5: Feedback Biasing
5.6: Summary
5.7: Exercises
06: Amplifier Concepts
6.1: Introduction
6.2: Amplifier Model
6.3: Compliance and Distortion
6.4: Frequency Response and Noise
6.5: Miller's Theorem
6.6: Summary
6.7: Exercises
07: BJT Small Signal Amplifiers
7.1: Introduction
7.2: Simplified AC Model of the BJT
7.3: Common Emitter Amplifier
7.4: Common Collector Amplifier
7.5: Common Base Amplifier
7.6: Multi-Stage Amplifiers
7.7: Summary
7.8: Exercises
08: BJT Class A Power Amplifiers
8.1: Introduction
8.2: Amplifier Classes
8.3: Class A Operation and Load Lines
8.4: Loudspeakers
8.5: Power Transistor Data Sheet Interpretation
8.6: Heat Sinks
8.7: Summary
8.8: Exercises
09: BJT Class B Power Amplifiers
9.1: Introduction
9.2: The Class B Configuration
9.3: Extensions and Refinements
9.4: Summary
9.5: Exercises
10: Junction Field Effect Transistors (JFETs)
10.1: Introduction
10.2: JFET Internals
10.3: JFET Data Sheet Interpretation
10.4: JFET Biasing
10.5: Summary
10.6: Exercises
11: JFET Small Signal Amplfiers
11.1: Introduction
11.2: Simplified AC Model of the JFET
11.3: Common Source Amplifier
11.4: Common Drain Amplifier
11.5: Multi-stage and Combination Circuits
11.6: Ohmic Region Operation
11.7: Summary
11.8: Exercises
12: Metal Oxide Semiconductor FETs (MOSFETs)
12.1: Introduction
12.2: The DE-MOSFET
12.3: DE-MOSFET Biasing
12.4: The E-MOSFET
12.5: E-MOSFET Data Sheet Interpretation
12.6: E-MOSFET Biasing
12.7: Summary
12.8: Exercises
13: MOSFET Small Signal Amplifiers
13.1: Introduction
13.2: MOSFET Common Source Amplifiers
13.3: MOSFET Common Drain Followers
13.4: Summary
13.5: Exercises
14: Class D Power Amplifiers
14.1: Introduction
14.2: Class D Basics
14.3: Pulse Width Modulation
14.4: Output Configurations
14.5: Summary
14.6: Exercises
15: Insulated Gate Bipolar Transistors (IGBTs)
15.1: Introduction
15.2: IGBT Internals
15.3: IGBT Data Sheet Interpretation
15.4: IGBT Applications
15.5: Summary
15.6: Exercises