Nguồn ngoài
Introduction to Nanoelectronics
Traditionally, progress in electronics has been driven by miniaturization. But as electronic devices approach the molecular scale, classical models for device behavior must be abandoned. To prepare for the next generation of electronic devices, this text teaches the theory of current, voltage and resistance from atoms up.
- Tác giả
- Marc Baldo
- Nhà xuất bản
- Massachusetts Institute of Technology
- Nguồn
- LibreTexts
- Giấy phép
- CC BY-NC-SA
- Ngôn ngữ
- EN
Mục lục· 132 mục
- 01: The Quantum Particle
- 1.01: The Quantum Particle
- 1.02: Waves in electronics
- 1.03: Review of Classical Waves
- 1.04: Plane waves
- 1.05: The Double Slit Experiment
- 1.06: Interpretation of the double slit experiment
- 1.07: The Wavefunction
- 1.08: Frequency domain and k-space descriptions of waves
- 1.09: Linear combinations of waves
- 1.10: Wave packets and uncertainty
- 1.11: Examples of wavepackets
- 1.12: Expectation values of position
- 1.13: Bra and Ket Notation
- 1.14: Parsevals Theorem
- 1.15: Expectation values of k and (omega)
- 1.16: The Commutator
- 1.17: Momentum and Energy
- 1.18: The Uncertainty Principle
- 1.19: Uncertainty in Energy and Time
- 1.20: Application of the Uncertainty Principle
- 1.21: Schrodingers Wave Equation
- 1.22: A Summary of Operators
- 1.23: The Time Independent Schrodinger Equation
- 1.24: Free Particles
- 1.25: The Square Well
- 1.26: Matching piecewise solutions
- 1.27: Bound solutions
- 1.28: The limit that (V 0 rightarrow infty) (the infinite square well)
- 1.29: The Finite Square Well
- 1.30: Potential barriers and Tunneling
- 1.31: Problems
- 02: The Quantum Particle in a Box
- 2.01: The Quantum Particle in a Box
- 2.02: How many electrons Fermi-Dirac Statistics
- 2.03: Current
- 2.04: Metals and Insulators
- 2.05: The Density of States
- 2.06: The Particle in a Box
- 2.07: The Schrodinger Equation in Higher Dimensions
- 2.08: The 0-D DOS - Single Molecules and Quantum Dots Confined in 3-D
- 2.09: Periodic Boundary Conditions
- 2.10: The 1-D DOS - Quantum Wires Confined in 2-D
- 2.11: Periodic Boundary Conditions in 2-D
- 2.12: The 2-D Density of States - Quantum Wells Confined in 1-D
- 2.13: Periodic boundary conditions in 3-D
- 2.14: The 3-d DOS- bulk materials with no confinement
- 2.15: Problems
- 03: Two Terminal Quantum Dot Devices
- 3.01: Two Terminal Quantum Dot Devices
- 3.02: Quantum Dot Single Molecule Conductors
- 3.03: Contacts
- 3.04: Equilibrium between contacts and the conductor
- 3.05: Calculation of the electrostatic capacitance
- 3.06: Current Flow in Two Terminal Quantum Dot Single Molecule Devices
- 3.07: Calculation of Current
- 3.08: Analytic calculations of the effects of charging
- 3.09: A small signal circuit model
- 3.10: The Ideal Contact Limit
- 3.11: Problems
- 04: Two Terminal Quantum Wire Devices
- 4.01: Two Terminal Quantum Wire Devices
- 4.02: Scattering and Ballistic Transport
- 4.03: Equilibrium between contacts and the conductor
- 4.04: Bias
- 4.05: The Spatial Profile of the Potential
- 4.06: The Quantum Limit of Conductance
- 4.07: The Landauer Formula
- 4.08: Spatial variation of the electrochemical potential
- 4.09: Ohms law
- 4.10: The Drude or Semi-Classical Model of Charge Transport
- 4.11: Mobility
- 4.12: Effective Mass
- 4.13: Comparing the quantum and Semi-Classical Drude models of conduction
- 4.14: Problems
- 05: Field Effect Transistors
- 5.01: Field Effect Transistors
- 5.02: FET switching
- 5.03: FET Calculations
- 5.04: Quantum Capacitance in FETs
- 5.05: Simplified models of FET switching
- 5.06: The Zero Charging limit
- 5.07: The Strong Charging Limit
- 5.08: The temperature dependence of current in the OFF state
- 5.09: Transconductance
- 5.10: The ballistic quantum wire FET.
- 5.11: Quantum dot models of quantum wire transistor channels
- 5.12: Ballistic Quantum Wire FET Current-Voltage Characteristics at T 0K.
- 5.13: Ballistic Quantum Well FETs
- 5.14: Comparison of ballistic and non-ballistic MOSFETs
- 5.15: Problems
- 06: The Electronic Structure of Materials
- 6.01: The hydrogen atom
- 6.02: Atoms to Molecules
- 6.03: Molecular orbitals
- 6.04: Linear combination of atomic orbitals (LCAO)
- 6.05: The Tight Binding Approximation
- 6.06: Solving for the energy
- 6.07: Examples of tight binding calculations
- 6.08: Polyacetylene
- 6.09: Crystals and periodic molecules
- 6.10: Polyacetylene (average bond model)
- 6.11: Polyacetylene (alternating bond model)
- 6.12: Graphene
- 6.13: Simple cubic face centered cubic and diamond lattices
- 6.14: Bloch functions- wavefunctions in periodic molecules
- 6.15: The first Brillouin zone
- 6.16: 2-d and 3-d periodic materials
- 6.17: Tight Binding Calculations in Periodic molecules and crystals
- 6.18: Bandstructure of Bulk Semiconductors
- 6.19: Band Gaps and Conduction and Valence bands
- 6.20: Analytic approximations for the bandstructure of graphene and carbon nanotubes
- 6.21: Band diagrams
- 6.22: Semiconductors and Insulators
- 6.23: Problems
- 07: Fundamental Limits in Computation
- 7.01: Speed and power in CMOS circuits
- 7.02: Switching Speed
- 7.03: Scaling Limits in CMOS
- 7.04: Brief notes on information theory and the thermodynamics of computation
- 7.05: Reversible computers
- 7.06: Reversible Computers and Noise
- 7.07: The future of electronics
- 7.08: So how can we approach the subthreshold limit
- 7.09: And beyond
- 7.10: Problems
- 08: References and Appendices
- 8.01: References
- 8.02: Appendix 1 - Electron Wavepacket Propagation
- 8.03: Appendix 2 - The Hydrogen Atom
- 8.04: Appendix 3 - The Born-Oppenheimer Approximation
- 8.05: Appendix 4 - Hybrid Orbitals